Datasheet > 1N5818-T3

1N5818-T3

更新时间： 2024-10-29 22:38:07

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	39K
描述
1.0A SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5818-T3 数据手册

WTE

PO WER SEMICONDUCTORS

1N5817 – 1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Mechanical Data

DO-41

Min

Dim

Max

Case: Molded Plastic

25.4

4.06

0.71

2.00

—

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

5.21

0.864

2.72

Weight: 0.34 grams (approx.)

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

1N5817

1N5818

1N5819

Unit

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current (Note 1)

@T_L= 90°C

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

@I_F= 3.0A

0.450

0.750

0.550

0.875

0.60

0.90

V^FM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

I^RM

Typical Junction Capacitance (Note 2)

C^j

110

K/W

°C

Typical Thermal Resistance Junction to Lead (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5817 – 1N5819

1 of 3

12 3

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与1N5818-T3相关器件

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