Datasheet > 1N5817

1N5817

更新时间： 2024-11-18 06:24:55

品牌	Logo	应用领域
DIOTECH		/
页数	文件大小	规格书
2页	616K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5817 数据手册

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 1.0 Ampere

FEATURES

DO-41

●

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

●

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

1.0 (25.4)

MIN.

●

Low power loss,high efficiency

High current capability,low forward voltage drop

High surge capability

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

0.107 (2.7)

0.080 (2.0)

DIA.

●

0.205 (5.2)

0.160(4.1)

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

0.034 (0.86)

0.028 (0.71)

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5817

1N5818

1N5819

UNITS

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^L=90 C

Peak forward surge current

I(AV)

1.0

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.450

0.550

0.600

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

T^A=25 C

1.0

10.0

T^A=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

110.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

中文翻译

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与1N5817相关器件

型号	品牌	获取价格	描述	数据表
1N5817/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819	ETC	获取价格	Schottky barrier diodes

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