Datasheet > 1N5817

1N5817

更新时间： 2024-11-18 06:20:23

品牌	Logo	应用领域
顺烨 - SHUNYE		/
页数	文件大小	规格书
2页	233K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5817 数据手册

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere

DO-41

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

DIA.

Low power loss,high efficiency

High current capability,low forward voltage drop

High surge capability

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

0.205 (5.2)

0.160(4.1)

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Dimensions in inches and (millimeters)

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5817

1N5818

1N5819

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=90 C

Peak forward surge current

I(AV)

1.0

Amp

IFSM

25.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.450

0.550

0.600

Maximum instantaneous forward voltage at 1.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

1.0

10.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

110.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与1N5817相关器件

型号	品牌	获取价格	描述	数据表
1N5817/1	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/100	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4E	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/53	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819	ETC	获取价格	Schottky barrier diodes

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