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1N5817 PDF预览

1N5817

更新时间: 2024-09-29 04:24:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 76K
描述
Axial Lead Rectifiers

1N5817 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:6.84Samacsys Description:NULL
其他特性:FREE WHEELING DIODE, LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:25 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40

1N5817 数据手册

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1N5817, 1N5818, 1N5819  
1N5817 and 1N5819 are Preferred Devices  
Axial Lead Rectifiers  
This series employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
chrome barrier metal, epitaxial construction with oxide passivation  
and metal overlap contact. Ideally suited for use as rectifiers in  
low−voltage, high−frequency inverters, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIERS  
Extremely Low V  
F
Low Stored Charge, Majority Carrier Conduction  
Low Power Loss/High Efficiency  
These are Pb−Free Devices*  
1.0 AMPERE  
20, 30 and 40 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 0.4 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes:  
260°C Max for 10 Seconds  
AXIAL LEAD  
CASE 59  
STYLE 1  
Polarity: Cathode Indicated by Polarity Band  
ESD Ratings: Machine Model = C (>400 V)  
Human Body Model = 3B (>8000 V)  
MARKING DIAGRAM  
A
1N581x  
YYWWG  
G
A
=Assembly Location  
1N581x =Device Number  
x= 7, 8, or 9  
YY  
WW  
G
=Year  
=Work Week  
=Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 10  
1N5817/D  

1N5817 替代型号

型号 品牌 替代类型 描述 数据表
SB120 ONSEMI

类似代替

1.0 A 肖特基势垒整流器
1N5817RLG ONSEMI

类似代替

Axial Lead Rectifiers
1N5817RL ONSEMI

类似代替

Axial Lead Rectifiers

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
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1N5817/53 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819 ETC

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Schottky barrier diodes