1N5813-B

更新时间： 2024-02-15 00:24:54

品牌	Logo	应用领域
美微科 - MCC		二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	125K
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中文翻译

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数据手册

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1N5813-B 数据手册

M C C

1N5812

thru

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N5816

Features

20 Amp Ultra Fast

Recovery Rectifier

50 to 150 Volts

Full threads eithin 2 1/2 threads

Standard Polarity : Stud is Cathode

DO-4

Maximum Ratings

•

Operating Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Maximum

Recurrent

Maximum DC

MCC

Maximum

Blocking

Voltage

Part Number Peak Reverse RMS Voltage

Voltage

1N5812

1N5813

50V

75V

35V

52.5V

50V

75V

1N5814

1N5815

1N5816

100V

125V

150V

70V

87.5V

105V

100V

125V

150V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

I_F(AV)

20 A

T_C= 100°C

I_FSM

400A 8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

.89V

.97V

I^FM=10A ;Tj = 25°C

IFM =20 A ;T_j=25°C

V_F

DIMENSIONS

INCH

MIN

10-32 UNF3A

.424

-----

.600

.422

.075

-----

MIN

Standard

10.77

-----

15.24

10.72

1.91

-----

4.15

-----

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

DIM

MAX

Threads

MAX

Polarity

NOTE

T^j= 25°C

T^j= 100°C

10uA

1mA

I_R

.437

.505

.800

.453

.175

.405

.189

.310

11.10

12.82

20.32

11.50

4.44

10.29

4.80

7.87

Maximum Reverse

Recovery Time

I^F=IR=1.0A dc

REC) = 0.1A

di / dt = 85 A / uS

.163

-----

45nS

I₍

-----

.020

.060

.350

.065

.100

-----

0.51

1.53

8.89

1.65

2.54

*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%

www.mccsemi.com

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与1N5813-B相关器件

型号	品牌	获取价格	描述	数据表
1N5813-BP	MCC	获取价格	Rectifier Diode,
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1N5813RE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 75V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N5814	NJSEMI	获取价格	FAST RECTIFIER, 10 A < I (O) / I (F) s 20A
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1N5814HCE	ETC	获取价格	Ultra Fast Rectifier (less than 100ns)
1N5814KCE	ETC	获取价格	Ultra Fast Rectifier (less than 100ns)
1N5814P	MCC	获取价格	暂无描述