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1N5813

更新时间: 2024-11-19 22:37:39
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美高森美 - MICROSEMI 二极管超快恢复二极管超快速恢复二极管
页数 文件大小 规格书
1页 61K
描述
ULTRA FAST RECOVERY RECTIFIERS

1N5813 数据手册

  
TECHNICAL DATA  
FAST RECOVERY POWER RECTIFIER  
Qualified per MIL-PRF-19500/ 478  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
1N5812  
1N5812R  
1N5814  
1N5814R  
1N5815  
1N5815R  
1N5816  
1N5816R  
MAXIMUM RATINGS  
Ratings  
1N5812 1N5814 1N5816  
1N5812R 1N5814R 1N5816R  
Symbol  
Unit  
Reverse Voltage  
50  
100  
100  
20  
150  
Vdc  
Vpk  
Adc  
VR  
VRWM  
IO  
Working Peak Reverse Voltage  
50  
150  
Average Forward Current  
Forward Current Surge Peak TC = +1000C  
tp = 8.3 ms  
TC = +1000C (1)  
400  
Adc  
IFSM  
Reverse Recovery Time  
35  
hs  
0C  
trr  
TJ, T  
Operating & Storage Junction Temperature  
-65 to +175  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
DO-203AA  
(DO-4)  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 250 mA/0C from +1000C to +1500C, & 300 mA/0C above +1500C  
1.5  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Zq  
Min.  
Max.  
Unit  
Thermal Impedance  
0C/W  
JX  
IH ³ rated IO; tH £ 250ms; 10 mA £ IM £ 100 mA; tMD = 250 ms (max)  
1.35  
Forward Voltage  
tp £ 8.3 ms, duty cycle £ 2.0% pulsed  
IF = 10 A (pk)  
IF = 20 A (pk)  
VF1  
VF2  
Vdc  
Vpk  
0.860  
0.950  
Reverse Current  
VR = Rated VR (See 1.3 of MIL-PRF-19500/478)  
Breakdown Voltage  
IR  
mAdc  
10  
IR = 100 mAdc  
IR = 100 mAdc  
IR = 100 mAdc  
1N5812, R  
1N5814, R  
1N5816, R  
60  
110  
160  
V(BR)  
Vdc  
Junction Capacitance  
VR = 10 Vdc, VSIG = 50 mVdc (p-p) max, f = 1.0 MHz  
Forward Recovery Voltage  
CJ  
VFR  
trr  
pF  
V(pk)  
hs  
300  
tp ³ 20 hs, tr = 8.0 hs; IF = 1,000 mA  
2.2  
15  
Forward Recovery Time  
IF = 1,000 mA  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 1  

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