1N5812-BP

更新时间： 2024-11-18 12:59:59

品牌	Logo	应用领域
美微科 - MCC		整流二极管
页数	文件大小	规格书
2页	125K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N5812-BP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	JESD-609代码：	e3
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

1N5812-BP 数据手册

M C C

1N5812

thru

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N5816

Features

20 Amp Ultra Fast

Recovery Rectifier

50 to 150 Volts

Full threads eithin 2 1/2 threads

Standard Polarity : Stud is Cathode

DO-4

Maximum Ratings

•

Operating Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Maximum

Recurrent

Maximum DC

MCC

Maximum

Blocking

Voltage

Part Number Peak Reverse RMS Voltage

Voltage

1N5812

1N5813

50V

75V

35V

52.5V

50V

75V

1N5814

1N5815

1N5816

100V

125V

150V

70V

87.5V

105V

100V

125V

150V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

I_F(AV)

20 A

T_C= 100°C

I_FSM

400A 8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

.89V

.97V

I^FM=10A ;Tj = 25°C

IFM =20 A ;T_j=25°C

V_F

DIMENSIONS

INCH

MIN

10-32 UNF3A

.424

-----

.600

.422

.075

-----

MIN

Standard

10.77

-----

15.24

10.72

1.91

-----

4.15

-----

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

DIM

MAX

Threads

MAX

Polarity

NOTE

T^j= 25°C

T^j= 100°C

10uA

1mA

I_R

.437

.505

.800

.453

.175

.405

.189

.310

11.10

12.82

20.32

11.50

4.44

10.29

4.80

7.87

Maximum Reverse

Recovery Time

I^F=IR=1.0A dc

REC) = 0.1A

di / dt = 85 A / uS

.163

-----

45nS

I₍

-----

.020

.060

.350

.065

.100

-----

0.51

1.53

8.89

1.65

2.54

*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%

www.mccsemi.com

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与1N5812-BP相关器件

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1N5812HCE	ETC	获取价格	Ultra Fast Rectifier (less than 100ns)
1N5812HCEE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DIE-1
1N5812KCE	ETC	获取价格	Ultra Fast Rectifier (less than 100ns)
1N5812KCEE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DIE-1
1N5812P	MCC	获取价格	DIODE 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-4, DO-4, 1 PIN, Rectifier Diode
1N5812R	MICROSEMI	获取价格	FAST RECOVERY POWER RECTIFIER
1N5812R	SENSITRON	获取价格	DESCRIPTION: 50 VOLT, 20 AMP, 35 NS HERMETIC RECTIFIER IN A DO-4 PACKAGE.
1N5813	MICROSEMI	获取价格	ULTRA FAST RECOVERY RECTIFIERS
1N5813	MCC	获取价格	20 Amp Ultra Fast Recovery Rectifier 50 to 150 Volts
1N5813	NJSEMI	获取价格	Diode Switching 75V 20A 2-Pin DO-4