1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
APPEARANCE
DESCRIPTION
These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477
and are ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to
150 volts are hermetically sealed with voidless-glass construction using an internal
“Category I” metallurgical bond. They are also available in surface-mount packages (see
separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various recovery
time speed requirements including standard, fast and ultrafast in thru-hole and surface-
mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
• Controlled avalanche with peak reverse power
19500/477
capability
• Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
•
•
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventory had
solid Silver axial-leads and no finish.
•
•
•
•
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
RECTIFIED RECTIFIED
CURRENT CURRENT
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
TYPE
I
@
I
@
@ V
I
O1
O2
RWM
FSM
V
t
rr
IR
(NOTE 3)
V
TL=+75ºC
(NOTE 1)
AMPS
TA=+55ºC
(Note 2)
AMPS
RWM
BR
VOLTS
VOLTS
VOLTS
AMPS
ns
μA
25oC
100oC 25oC 100oC
1N5802
1N5803
1N5804
1N5805
1N5806
50
75
100
125
150
55
80
110
135
160
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.800
0.800
0.800
1
1
1
1
1
50
50
50
50
50
35
35
35
35
35
25
25
25
25
25
0.875
0.875
NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I = 0.5 A, I
= 0.5 A, I
= .05 A
F
RM
R(REC)
Copyright © 2007
1-15-2007 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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