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1N5802-1 PDF预览

1N5802-1

更新时间: 2024-11-14 22:34:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复二极管
页数 文件大小 规格书
3页 49K
描述
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

1N5802-1 数据手册

 浏览型号1N5802-1的Datasheet PDF文件第2页浏览型号1N5802-1的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
1N5802  
1N5804  
1N5806  
JANHCE and JANKCE  
JANHCF and JANKCF  
FEATURES:  
·
·
·
·
·
·
·
·
Chip Outline Dimensions: 41 x 41 mils  
Chip Thickness: 8 to 12 mils  
Anode Metallization: Aluminum  
Metallization Thickness: 50,000Ã Nominal  
Bonding Area: 23 x 23 mils Min.  
Back Metallization: Gold  
2.5 AMPS  
FAST RECOVERY  
RECTIFIER CHIP  
50 - 150 VOLTS  
Junction Passivated with Thermal Silicon Dioxide - Planar Design  
Backside Available with Solderable Ag Backside as JANHCF or  
JANKCF  
Chip Type: RH  
TYPE  
VR  
VBR  
IO Tj = 75°C  
JANHCE1N5802  
JANHCE1N5804  
JANHCE1N5806  
JANKCE1N5802  
JANKCE1N5804  
JANKCE1N5806  
50V  
100V  
150V  
50V  
100V  
150V  
60V  
110V  
160V  
60V  
110V  
160V  
2.5A  
2.5A  
2.5A  
2.5A  
2.5A  
2.5A  
A
ELECTRICAL CHARACTERISTICS:  
CHARACTERISTIC  
SYMBOL  
TYPICAL  
MAX.  
UNITS  
Reverse Current  
Rated V , T = 25°C  
I
R
.01  
1
mA  
R
C
Reverse Current  
Rated V , T = 100°C  
I
1.0  
.80  
15  
50  
.875  
25  
mA  
Volts  
Pf  
R
C
R
Forward Voltage Drop I = 1A, T = 25°C  
V
F
F
C
Junction Capacitance @ V = 10V  
Cj  
R
REVERSE RECOVERY CHARACTERISTICS:  
CHARACTERISTIC  
SYMBOL  
TYPICAL  
MAX.  
UNITS  
Reverse Recovery Time  
I = 0.5A, I = 0.5A, I = 0.05A  
Trr  
Vrr  
20  
25  
2.2  
15  
ns  
V
F
R
RR  
Forward Recovery Voltage @ 1A Trr = 8ns  
Forward Recovery Time  
1.5  
I
= 250 mA  
ns  
FM  
MSC1344.PDF 02-23-99  

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