Datasheet > 1N5774S

1N5774S

更新时间： 2024-11-16 08:00:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	510K
描述
Trans Voltage Suppressor Diode

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数据手册

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1N5774S 数据手册

SG5768, SG5770, SG5772, SG5774

SG6506/SG6507/SG6508/SG6509

DIODE ARRAY CIRCUITS

DESCRIPTION

FEATURES

The Linfinity series of diode arrays feature high breakdown, high speed

diodes in a variety of configurations.

• 60V minimum breakdown voltage

• 500mA current capability per diode

• Fast switching speeds: typically less than

10ns

Each array configuration consists of either common anode diodes,

common cathode diodes, or a combination of common anode and

common cathode diodes.

• Low leakage current

HIGH RELIABILITY FEATURES

Individual diodes within the array have 60V minimum breakdown

voltage, can handle 500mA of current and typically switch in less than

10 nanoseconds.

♦ MIL-S-19500/474 QPL - 1N5768 - 1N6506

- 1N5770 - 1N6507

- 1N5772 - 1N6508

Each of the array configurations is available in ceramic DIP or ceramic

flatpack and can be processed to JANTXV, JANTX, or JAN flows at

Linfinity’s MIL-S-19500 facility.

- 1N5774 - 1N6509

♦ JANTXV, JANTX & JAN available

♦ LMI level "S" processing available

CIRCUIT DIAGRAMS

COMMON CATHODE

SG5768/SG6506

COMMON ANODE

SG5770/SG6507

COMMON ANODE / COMMON CATHODE

SG5772/SG6508

DUAL COMMON ANODE / COMMON CATHODE

SG5774/SG6509

6/90 Rev 1.1 2/94

LINFINITY Microelectronics Inc.

11861 Western Avenue ∞ Garden Grove, CA 92841

(714) 898-8121 ∞ FAX: (714) 893-2570

12 3 4 5

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