1N5774
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive
side of the power supply line and to ground (see figure 1). An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
14-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
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Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 μs
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N5774 for a JANTX screen.
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
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Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +200oC
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14-PIN Ceramic Flat Pack
Weight 0.29 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
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Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
REVERSE
RECOVERY TIME
trr
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
RECOVERY TIME
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
I = IR = 200 mA
F
V
V
F2
F1
Ct
t
fr
i = 20 mA
rr
I = 100 mA
I = 500 mA
I
VR = 0 V
F = 1 MHz
F
F
R1
I = 500 mA
F
R = 100 ohms
L
(Note 1)
(Note 1)
VR = 40 V
PART
NUMBER
Vdc
Vdc
μAdc
pF
ns
ns
1N5774
1
1.5
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2006
12-13-2006 REV B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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