SENSITRON
1N5770
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5152, REV. -
Isolated Diode Array
Applications:
• High Frequency Data Lines
• RS-323 & RS-432 Networks
• LAN, Ethernet, I/O Ports
• IEC61000-4 compatible for ESD / EFT / Surge
Features:
•
Protects up to 8 I/O Ports
•
•
•
•
•
•
Isolated diodes eliminate crosstalk
High Density Packaging
High Breakdown Voltage; High Speed Switching (< 10 nsec)
Low Capacitance; Low Leakage
Hermetic Ceramic package
TX, TXV, S level screening available
Maximum Ratings:
All ratings are at 25 oC unless otherwise noted
Characteristics
Reverse Breakdown Voltage
Continuous Forward Current
Symbol
VBR
Condition
Per diode @ 10 µA
Per diode, Derate at 2.4 mA/°C
above +25 °C
Max.
60
300
Units
Vdc
mA
IO
Peak Surge Current
Power Dissipation
IFSM
PD
Per diode, tP = 8.3 msec
Per Junction, Derate at
4.0 mW/°C above +25 °C
Per Package, Derate at
4 mW/oC above 25 oC
-
500
400
mA
mW
Power Dissipation
PD
500
mW
Max. Operating Temperature
Max. Storage Temperature
TJ
Tstg
-65 to +150
-65 to +200
°C
°C
-
Electrical Characteristics:
All ratings are per diode and at 25 oC unless otherwise noted
Characteristics
Symbol
Condition
Max.
Units
VF1
If = 100mAdc
If = 500mAdc
1.00
V
Pulsed
PW = 300 µs
Max. Forward Voltage Drop
VF2
1.50
V
Max. Reverse Current
Max. Capacitance
(Pin to Pin)
Max. Forward Recovery
Time
IR1
CT
@VR = 40V
0.1
8
µA
pF
@VR = 0V, f =1MHz
IF = 500mA
TFR
TRR
40
20
ns
ns
Max. Reverse Recovery
Time
IF = IR = 200 mA dc, IRR = 20
mA dc, RL = 100 ohms
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