Datasheet > 1N5768TXV

1N5768TXV

更新时间： 2024-02-01 00:53:35

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1N5768TXV 数据手册

SENSITRON

1N5768

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5151, REV. -

Isolated Diode Array

Applications:

• High Frequency Data Lines

• RS-323 & RS-432 Networks

• LAN, Ethernet, I/O Ports

• IEC61000-4 compatible for ESD / EFT / Surge

Features:

•

Protects up to 8 I/O Ports

•

Isolated diodes eliminate crosstalk

High Density Packaging

High Breakdown Voltage; High Speed Switching (< 10 nsec)

Low Capacitance; Low Leakage

Hermetic Ceramic package

TX, TXV, S level screening available

Maximum Ratings:

All ratings are at 25 ^oC unless otherwise noted

Characteristics

Reverse Breakdown Voltage

Continuous Forward Current

Symbol

V_BR

Condition

Per diode @ 10 µA

Per diode, Derate at 2.4 mA/°C

above +25 °C

Max.

300

Units

Vdc

I_O

Peak Surge Current

Power Dissipation

I_FSM

P_D

Per diode, t_P= 8.3 msec

Per Junction, Derate at

4.0 mW/°C above +25 °C

Per Package, Derate at

4 mW/^oC above 25 ^oC

500

400

Power Dissipation

P_D

500

Max. Operating Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +150

-65 to +200

°C

Electrical Characteristics:

All ratings are per diode and at 25 ^oC unless otherwise noted

Characteristics

Symbol

Condition

Max.

Units

V_F1

If = 100mAdc

If = 500mAdc

1.00

Pulsed

PW = 300 µs

Max. Forward Voltage Drop

V_F2

1.50

Max. Reverse Current

Max. Capacitance

(Pin to Pin)

Max. Forward Recovery

Time

I_R1

C_T

@V_R= 40V

0.1

µA

@V_R= 0V, f =1MHz

I_F= 500mA

T_FR

T_RR

Max. Reverse Recovery

Time

I_F= I_R= 200 mA dc, I_RR= 20

mA dc, R_L= 100 ohms

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