1N5768S

更新时间： 2024-01-11 03:24:30

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管测试
页数	文件大小	规格书
1页	23K
描述
Trans Voltage Suppressor Diode

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技术参数
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1N5768S 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

1N5768S 数据手册

1N5768

A Microsemi Company

580 Pleasant St.

Watertown, MA 02472

Phone: 617-924-9280

Fax: 617-924-1235

DIODE ARRAY PRODUCT SPECIFICATION

MONOLITHIC AIR ISOLATED

DIODE ARRAY

FEATURES:

· HERMETIC CERAMIC PACKAGE

· Bv > 60V at 10uA

· Ir < 100nA at 40V

· C < 4.0 pF

Absolute Maximum Ratings:

1: NOT CONNECTED

Symbol

Parameter

Limit

Unit

.290

MAX

VBR(R) *1 *2 Reverse Breakdown Voltage

Vdc

.019

.010

.005

MIN

.006

.003

*1 * 3 Continuous Forward Current

*1 Peak Surge Current (tp= 1/120 s)

*4 Power Dissipation per Junction @ 25°C

*4 Power Dissipation per Package @ 25°C

Operating Junction Temperature Range

Storage Temperature Range

300

500

400

500

mAdc

IFSM

PT1

PT2

Top

Tstg

.370

.240

-65 to +150 °C

-65 to +200 °C

.280

MAX

.260

.240

NOTE 1: Each Diode

NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%

NOTE 3: Derate at 2.4mA/°C above +25 °C

NOTE 4: Derate at 4.0mW/°C above +25 °C

.050

.005

.370

.240

.045

MAX

.090

.030

.050

BSC

Electrical Characteristics (Per Diode) @

25°C unless otherwise specified

PACKAGE OUTLINE

Symbol Parameter

Conditions

Min

Max Unit

Vf1

Vf2

IR1

tfr

trr

Forward Voltage

Reverse Current

Capacitance (pin to pin)

Forward Recovery Time

Reverse Recovery Time

If = 100mAdc *1

If = 500mAdc *1

VR = 40 Vdc

VR = 0 Vdc ; f = 1 MHz

If = 500mAdc

Vdc

1.5 Vdc

0.1 uAdc

4.0 pF

If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge

Sertech reserves the right to make changes to any product design, specification or other

information at any time without prior notice.

MSC1011.PDF Rev - 11/25/98

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