5秒后页面跳转
1N5696B PDF预览

1N5696B

更新时间: 2024-12-01 14:23:47
品牌 Logo 应用领域
艾法斯 - AEROFLEX 测试二极管变容二极管
页数 文件大小 规格书
1页 33K
描述
6.8pF, 65V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2

1N5696B 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:DO-7包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.15最小击穿电压:65 V
外壳连接:ISOLATED配置:SINGLE
二极管电容容差:5%最小二极管电容比:2.7
标称二极管电容:6.8 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODEJEDEC-95代码:DO-7
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W认证状态:Not Qualified
最小质量因数:450最大重复峰值反向电压:60 V
最大反向电流:2e-8 µA反向测试电压:60 V
子类别:Varactors表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:ABRUPTBase Number Matches:1

1N5696B 数据手册

  
GENERAL PURPOSE ABRUPT VARACTOR DIODES  
1N5681 TO 1N5709  
PART  
NUMBER  
CAPACITANCE MIN QUALITY FACTOR  
CAPACITANCE RATIO  
MAX WORKING  
VOLTAGE  
(Vdc)  
MIN REVERSE  
BREAKDOWN VOLTAGE  
Ir = 10µA (Vdc)  
@ 4Vdc  
@ 4Vdc  
2V / 40V  
4V / 60V  
1 MHz (pF)  
F = 50 MHz  
MIN TYP  
MIN TYP  
1N5681  
1N5682  
6.8  
8.2  
600  
600  
3.1 3.3  
3.1 3.3  
40  
40  
45  
45  
1N5683  
1N5684  
10.0  
12.0  
550  
550  
3.2 3.4  
3.2 3.4  
40  
40  
45  
45  
1N5685  
1N5686  
15.0  
18.0  
550  
500  
3.2 3.4  
3.2 3.4  
40  
40  
45  
45  
1N5687  
1N5688  
22.0  
27.0  
500  
500  
3.3 3.5  
3.3 3.5  
40  
40  
45  
45  
1N5689  
1N5690  
33.0  
39.0  
500  
450  
3.3 3.5  
3.3 3.5  
40  
40  
45  
45  
1N5691  
1N5692  
47.0  
56.0  
400  
300  
3.3 3.5  
3.3 3.5  
40  
40  
45  
45  
1N5693  
1N5694  
68.0  
82.0  
250  
225  
3.3 3.5  
3.3 3.5  
40  
40  
45  
45  
1N5695  
100.0  
200  
3.3 3.5  
40  
45  
1N5696  
1N5697  
6.8  
8.2  
450  
450  
2.7  
2.7  
2.9  
2.9  
60  
60  
65  
65  
1N5698  
1N5699  
10.0  
12.0  
400  
400  
2.8  
2.8  
3.0  
3.0  
60  
60  
65  
65  
1N5700  
1N5701  
15.0  
18.0  
400  
375  
2.8  
2.8  
3.0  
3.0  
60  
60  
65  
65  
1N5702  
1N5703  
22.0  
27.0  
375  
350  
3.2  
3.2  
3.4  
3.4  
60  
60  
65  
65  
1N5704  
1N5705  
33.0  
39.0  
350  
325  
3.2  
3.2  
3.4  
3.4  
60  
60  
65  
65  
1N5706  
1N5707  
47.0  
56.0  
300  
225  
3.2  
3.2  
3.4  
3.4  
60  
60  
65  
65  
1N5708  
1N5709  
68.0  
82.0  
175  
150  
3.2  
3.2  
3.4  
3.4  
60  
60  
65  
65  
Package Style  
DO-7  
DC Power Dissipation  
400 mW  
Max Reverse Current (IR)  
Max Reverse Current (IR2)  
Operating Temperature (Topr)  
Storage Temperature (Tstg)  
Capacitance Tolerance:  
@ Ta = 25°C  
@ Ta = 150°C  
20 nA @ MWV  
20 µA @ MWV  
-65 to + 175°C  
-65 to + 200°C  
±20%  
Standard Device  
Suffix A  
±10%  
Suffix B  
±5%  
P.O. BOX 609 · ROCKPORT, MAINE 04856 · 207-236-6076 · FAX 207-236-9558  

与1N5696B相关器件

型号 品牌 获取价格 描述 数据表
1N5696CO AEROFLEX

获取价格

Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon, DIE-1
1N5697 KNOX

获取价格

GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5697 ONSEMI

获取价格

DIODE VARACTOR DIODE,SINGLE,8.2PF C(T),DO-7, Variable Capacitance Diode
1N5697A APITECH

获取价格

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 65V,
1N5697AB APITECH

获取价格

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 65V,
1N5697ACO AEROFLEX

获取价格

8.2pF, 65V, SILICON, VARIABLE CAPACITANCE DIODE, DIE-1
1N5697B AEROFLEX

获取价格

8.2pF, 65V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2
1N5697B APITECH

获取价格

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 65V,
1N5697BCO AEROFLEX

获取价格

Variable Capacitance Diode, 8.2pF C(T), 65V, Silicon, DIE-1
1N5697CO AEROFLEX

获取价格

Variable Capacitance Diode, 8.2pF C(T), 65V, Silicon, DIE-1