1N5622GP

更新时间： 2024-02-26 17:24:04

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
4页	106K
描述
Glass Passivated Junction Rectifier

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技术参数
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1N5622GP 技术参数

生命周期：	Obsolete	包装说明：	O-MELF-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.63
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-MELF-N2	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	1 A
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
最大反向恢复时间：	2 µs	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	END
Base Number Matches：	1

1N5622GP 数据手册

1N5614GP thru 1N5622GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, I less than 0.1 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 260 °C, 40 s

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

DO-204AC (DO-15)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

by Patent No. 3,930,306

TYPICAL APPLICATIONS

For use in general purpose rectification of power

supplies, inverters, converters and freewheeling

diodes application.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

1.0 A

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL 94V-0 flammability rating

V_RRM

I_FSM

I_R

200 V to 1000 V

50 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

0.5 µA

V_F

1.2 V

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

T_Jmax.

175 °C

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT

Maximum repetitive peak reverse voltage ⁽¹⁾

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum RMS voltage

Maximum DC blocking voltage ⁽¹⁾

1000

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load ⁽¹⁾

I_FSM

Operating junction and storage temperature range ⁽¹⁾T_J, T_STG

- 65 to + 175

°C

Note:

(1) JEDEC registered values

Document Number: 88520

Revision: 03-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

中文翻译

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与1N5622GP相关器件

型号	品牌	获取价格	描述	数据表
1N5622GP/100-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4E-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4F-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4G-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5622GP/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5622GP/53-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/58	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5622GP/58-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/64	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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