Datasheet > 1N5622/4

1N5622/4

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	125K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2

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1N5622/4 数据手册

1N5614 to 1N5622

VISHAY

Vishay Semiconductors

Sinterglass Medium-Switching Junction Rectifier

Features

• High temperature metallurgically bonded con-

structed rectifiers

• 1.0 ampere operation at T

mal runaway

= 55 °C with no ther-

amb

• Typical I less than 0.1 µA

• Hermetically sealed package

• Capable of meeting environmental standards of

MIL-S-19500

• High temperature soldering guaranteed: 350 °C/

10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs.

(2.3 kg) tension

17031

Mechanical Data

Case: JEDEC DO-204AP Solid glass body

Terminals: Solder plated axial leads, solderable per

Parts Table

Part

Type differentiation

MIL-STD-750, Method 2026

1N5614

V_RRM= 200 V

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 560 mg

1N5616

1N5618

1N5620

1N5622

V_RRM= 400 V

V_RRM= 600 V

V_RRM= 800 V

V_RRM= 1000 V

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Sub type Symbol

Value

200

Unit

Maximum repetitive peak reverse voltage

1N5614

1N5616

1N5618

1N5620

1N5622

1N5614

1N5616

1N5618

1N5620

1N5622

1N5614

1N5616

1N5618

1N5620

1N5622

V_RRM

V_RMS

V_DC

400

600

800

1000

140

280

420

560

700

200

400

600

800

1000

1.0

Maximum RMS voltage

Maximum DC blocking voltage

V_DC

Maximum average forward rectified current

Peak forward surge current

0.375 " (9.5 mm) lead length at T_amb= 55 °C

I_F(AV)

I_FSM

8.3 ms single half sine-wave superimposed on

rated load (JEDEC Method)

Document Number 86088

Rev. 1, 12-Nov-02

www.vishay.com

12 3 4 5

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