1N5622

更新时间： 2024-11-24 22:37:39

品牌	Logo	应用领域
威世 - VISHAY		二极管开关
页数	文件大小	规格书
2页	54K
描述
GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER

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中文翻译

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1N5622 数据手册

1N5614 THRU 1N5622

GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER

Reverse Voltage - 200 to 1000 Volts

Forward Current - 1.0. Ampere

FEATURES

DO-204AP

♦ High temperature metallurgically bonded construction

♦ 1.0 Ampere operation

at T = 55°C with

no thermal runaway

0.034 (0.86)

0.028 (0.71)

1.0 (25.4)

DIA.

♦ Typical I less than 0.1µA

MIN.

♦ Hermetically sealed package

♦ Capable of meeting environmental standards of

MIL-S-19500

0.240 (6.1)

MAX.

♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375” (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.150 (3.8)

0.100 (2.5)

DIA.

MECHANICAL DATA

1.0 (25.4)

Case: JEDEC DO-204AP solid glass body

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

MIN.

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.02 ounce, 0.56 gram

Dimensions in inches and (millimeters)

*Brazed-lead assembly is covered by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

1N5614

200

1N5616

400

1N5618

600

1N5620

800

1N5622

1000

700

UNITS

Volts

* Maximum repetitive peak reverse voltage

Maximum RMS voltage

140

280

420

560

* Maximum DC blocking voltage

200

400

600

800

1000

1100

* Minimum reverse breakdown voltage at 50µA

V_BR

220

440

660

880

Maximum average forward rectified current

0.375” (9.5mm) lead length at T_A=55°C

I_(AV)

1.0

Amp

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

V_F

50.0

1.2

Amps

Volts

µA

* Maximum instantaneous forward voltage at 1.0A

* Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=100°C

T_A=200°C

0.5

25.0

1500

I_R

* Maximum reverse recovery time _{(NOTE 1)}

Maximum junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

* Operating junction temperature range

* Storage temperature range

t_rr

C_J

2.0

µs

R_ΘJA

T_J

55.0

°C/W

°C

-65 to +175

-65 to +200

T_STG

°C

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, Irr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 12 Volts

(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length P.C.B. mounted

*JEDEC registered values

4/98

中文翻译

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与1N5622相关器件

型号	品牌	获取价格	描述	数据表
1N5622/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PA
1N5622C	SEMTECH	获取价格	200V-1000V Axial Leaded Fast Avalanche Rectifier Diode
1N5622C-TR	SEMTECH	获取价格	200V-1000V Axial Leaded Fast Avalanche Rectifier Diode
1N5622-E3/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC
1N5622GP	VISHAY	获取价格	Glass Passivated Junction Rectifier
1N5622GP/100-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4E-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4F-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4G-E3	VISHAY	获取价格	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5622GP/4H	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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