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1N5622 PDF预览

1N5622

更新时间: 2024-01-02 01:35:49
品牌 Logo 应用领域
EIC 二极管
页数 文件大小 规格书
1页 121K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N5622 技术参数

生命周期:Obsolete包装说明:O-MELF-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-MELF-N2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:2 µs表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

1N5622 数据手册

  
Certificate TH97/10561QM  
Certificate TW00/17276EM  
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N5614 - 1N5622  
PRV : 200 - 1000 Volts  
Io : 1.0 Ampere  
DO - 41  
FEATURES :  
* Glass passivated chip  
* High forward surge current capability  
* High reliability  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.205 (5.2)  
0.161 (4.1)  
MECHANICAL DATA :  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.028 (0.71)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.34 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT  
VRWM  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 50 μA  
Maximum Average Forward Current at Ta = 55 °C  
at Ta = 100 °C  
200  
220  
400  
440  
600  
660  
1.0  
800  
880  
1000  
1100  
V
V
VBR(MIN)  
IF(AV)  
A
0.75  
Peak Forward Surge Current  
IFSM  
30  
A
(Ta = 100 °C,f = 60 Hz, IF(AV) = 750 mA for ten 8.3 ms  
surges @ 1 minute intervals)  
Minimum Forward Voltage at IF = 3.0 A  
Maximum Forward Voltage at IF = 3.0A  
VF(MIN)  
VF(MAX)  
IR  
0.8  
V
V
1.3  
at VRWM, Ta = 25 °C  
at VRWM, Ta = 100 °C  
Maximum Reverse Current  
0.5  
μA  
IR(H)  
25  
2.0  
Maximum Reverse Recovery Time ( Note 1 )  
Thermal Resistance , Junction to Lead (Note 2)  
Operating Junction and Storage Temperature Range  
Trr  
μs  
°C/W  
°C  
RӨJL  
38  
TJ, TSTG  
-65 to +175  
Notes :  
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.  
(2) At 3/8"(10 mm) lead length form body.  
Page 1 of 1  
Rev. 02 : July 24, 2006  

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