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1N5551US PDF预览

1N5551US

更新时间： 2024-02-14 18:52:42
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管局域网
页数 文件大小 规格书
2页 88K
描述
VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS

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1N5551US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：O-MELF-N2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.7
应用：GENERAL PURPOSE外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.2 V
JESD-30 代码：O-MELF-N2最大非重复峰值正向电流：150 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：METAL封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大反向电流：1 µA
最大反向恢复时间：2 µs表面贴装：YES
端子形式：NO LEAD端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N5551US 数据手册

 浏览型号1N5551US的Datasheet PDF文件第2页 
1N5550US thru 1N5554US  
VOIDLESS HERMITICALLY SEALED  
SURFACE MOUNT STANDARD  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” surface mount rectifier diode series is military qualified to  
MIL-PRF-19500/420 and is ideal for high-reliability applications where a failure cannot  
be tolerated. These industry-recognized 5.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in axial-leaded packages for thru-hole mounting (see separate data  
sheet for 1N5550 thru 1N5554). Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speeds.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount package series equivalent to the  
JEDEC registered 1N5550 to 1N5554 series  
•
•
•
Standard recovery 5 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Low thermal resistance  
Controlled avalanche with peak reverse power  
capability  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
•
•
•
•
Voidless hermetically sealed glass package  
Extremely robust construction  
•
•
•
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/420  
•
•
Axial-leaded equivalents also available (see separate  
data sheet for 1N5550 thru 1N5554)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
Junction Temperature: -65oC to +200oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs  
Storage Temperature: -65oC to +175oC  
Thermal Resistance: 11oC/W junction to endcap  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
Average Rectified Forward Current (IO): 5 Amps @  
TERMINALS: End caps are Copper with Tin/Lead  
(Sn/Pb) finish. Note: Previous inventory had solid  
Silver end caps with Tin/Lead (Sn/Pb) finish.  
•
•
•
•
•
MARKING: Cathode band only  
POLARITY: Cathode indicated by band  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 539 mg  
T
EC = 55ºC (see Note 1)  
•
•
Forward Surge Current (8.3 ms half sine): 100 Amps  
Solder temperatures: 260oC for 10 s (maximum)  
See package dimensions and recommended pad  
layout on last page  
ELECTRICAL CHARACTERISTICS  
MINIMUM  
BREAKDOWN  
VOLTAGE  
VBR  
WORKING  
PEAK  
AVERAGE  
RECTIFIED  
CURRENT  
AVERAGE  
RECTIFIED  
CURRENT  
TYPE  
FORWARD VOLTAGE  
VF @ 9A (pk)  
REVERSE  
CURRENT  
IR @ VRWM  
REVERSE  
RECOVERY  
trr  
REVERSE  
VOLTAGE  
VRWM  
IO1  
@
IO2 @  
TEC=+55o  
TA=+55oC  
Note 2  
MIN.  
MAX.  
@50μA  
Note 3  
μs  
VOLTS  
VOLTS  
VOLTS  
VOLTS  
μA  
C
Note 1  
AMPS  
AMPS  
1N5550US  
1N5551US  
1N5552US  
1N5553US  
1N5554US  
220  
440  
660  
880  
1100  
200  
400  
600  
800  
1000  
5
5
5
5
5
3
3
3
3
3
0.6V (pk)  
0.6V (pk)  
0.6V (pk)  
0.6V (pk)  
0.6V (pk)  
1.2V (pk)  
1.2V (pk)  
1.2V (pk)  
1.3V (pk)  
1.3V (pk)  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
2.0  
2.0  
NOTE 1: Derate linearly at 66.6 mA/ºC above TEC = 100ºC. An IO of up to 6 Amps is allowable provided that appropriate heat sinking or  
forced air cooling maintains the junction temperature at or below +200C.  
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to  
ambient is sufficient controlled where TJ(MAX) rating is not exceeded.  
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A  
Copyright © 2006  
11-27-2006 REV B  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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