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1N5551 PDF预览

1N5551

更新时间: 2024-02-17 16:41:30
品牌 Logo 应用领域
商升特 - SEMTECH 整流二极管
页数 文件大小 规格书
4页 160K
描述
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode

1N5551 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-MELF-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-MELF-N2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向电流:1 µA
最大反向恢复时间:2 µs表面贴装:YES
端子形式:NO LEAD端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5551 数据手册

 浏览型号1N5551的Datasheet PDF文件第2页浏览型号1N5551的Datasheet PDF文件第3页浏览型号1N5551的Datasheet PDF文件第4页 
1N5550 THRU 1N5554  
3SM2 THRU 3SM0  
Axial Leaded Hermetically Sealed  
Standard Recovery Rectifier Diode  
POWER DISCRETES  
Description  
Features  
Quick reference data  
‹ Low reverse leakage current  
‹ Hermetically sealed in fused metal oxide  
‹ Good thermal shock resistance  
‹ Low forward voltage drop  
VR = 200 - 1000V  
IF  
5.0A  
=
trr = 2µS  
VF = 1.0V  
‹ Avalanche capability  
These products are qualified to MIL-PRF-19500/420.  
They can be supplied fully released as JAN, JANTX, and  
JANTXV versions.  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25°C unless otherwise specified.  
1N5550  
1N5551  
3SM4  
1N5552  
3SM6  
1N5553  
3SM8  
1N5554  
3SM0  
Symbol  
Units  
3SM2  
Working Reverse Voltage  
VRWM  
200  
400  
600  
800  
1000  
V
Average Forward Current  
@ 55°C in free air, lead length  
0.375"  
IF(AV)  
5.0  
A
A
Repetitive Surge Current  
@ 55°C in free air, lead length  
0.375"  
IFRM  
25  
Non-Repetitive Surge Current  
(tp = 8.3mS @ VR & TJMAX  
)
IFSM  
100  
150  
A
(tp = 8.3mS, @ VR & 25°C)  
Storage Temperature Range  
TSTG  
-65 to +175  
°C  
Revision: October 4, 2007  
1
www.semtech.com  

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