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1N5550/54 PDF预览

1N5550/54

更新时间: 2024-11-07 18:56:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 127K
描述
Rectifier Diode, 1 Element, 3A, 200V V(RRM),

1N5550/54 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 V最大非重复峰值正向电流:100 A
元件数量:1最高工作温度:175 °C
最大输出电流:3 A最大重复峰值反向电压:200 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

1N5550/54 数据手册

 浏览型号1N5550/54的Datasheet PDF文件第2页浏览型号1N5550/54的Datasheet PDF文件第3页浏览型号1N5550/54的Datasheet PDF文件第4页浏览型号1N5550/54的Datasheet PDF文件第5页浏览型号1N5550/54的Datasheet PDF文件第6页 
1N5550 to 1N5552  
VISHAY  
Vishay Semiconductors  
Standard Sinterglass Diode  
Features  
• Cavity-free glass passivated junction  
• High temperature metallurgically bonded con-  
struction  
• Hermetically sealed package  
• Medium switching for improved efficiency  
Mechanical Data  
Case: Sintered glass case, G4  
17133  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 1040 mg  
Parts Table  
Part  
Type differentiation  
Package  
1N5550  
1N5551  
1N5552  
V
V
V
= 200 V  
= 400 V  
= 600 V  
G-4  
RRM  
RRM  
RRM  
G-4  
G-4  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
1N5550  
V
= V  
R
RRM  
1N5551  
1N5552  
V
V
= V  
= V  
400  
600  
3.0  
V
V
A
R
R
RRM  
RRM  
Maximum average forward  
rectified current  
0.375 " (9.5 mm) lead length at  
I
F(AV)  
T
= 55 °C  
amb  
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method)  
I
100  
A
FSM  
Operating and storage  
temperature range  
T , T  
- 55 to + 175  
°C  
J
STG  
Document Number 86080  
Rev. 1.3, 11-Aug-04  
www.vishay.com  
1

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