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1N5526CD7E3 PDF预览

1N5526CD7E3

更新时间: 2024-11-15 07:22:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
2页 88K
描述
Zener Diode, 6.8V V(Z), 2%, 0.4W, Silicon, Unidirectional,

1N5526CD7E3 技术参数

生命周期:Active包装说明:O-XALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.6
Is Samacsys:N其他特性:LOW NOISE, LOW IMPEDANCE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.4 W
标称参考电压:6.8 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:2%
工作测试电流:1 mABase Number Matches:1

1N5526CD7E3 数据手册

 浏览型号1N5526CD7E3的Datasheet PDF文件第2页 

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