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1N5441BCHIP PDF预览

1N5441BCHIP

更新时间: 2024-09-28 20:42:19
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 59K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt

1N5441BCHIP 技术参数

生命周期:Obsolete包装说明:X-XUUC-N
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.63
其他特性:GOOD Q最小击穿电压:30 V
配置:SINGLE二极管电容容差:5%
最小二极管电容比:2.5标称二极管电容:6.8 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:X-XUUC-N
元件数量:1最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:UNSPECIFIED
封装形式:UNCASED CHIP认证状态:Not Qualified
最小质量因数:450最大重复峰值反向电压:30 V
最大反向电流:2e-8 µA反向测试电压:25 V
子类别:Varactors表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
变容二极管分类:ABRUPTBase Number Matches:1

1N5441BCHIP 数据手册

  

与1N5441BCHIP相关器件

型号 品牌 获取价格 描述 数据表
1N5441C NJSEMI

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DIODE
1N5441CCHIP APITECH

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Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V,
1N5441CCO AEROFLEX

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6.8pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, DIE-1
1N5441D NJSEMI

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DIODE
1N5442 NJSEMI

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VARACTOR TUNING DIODES
1N5442 AEROFLEX

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8.2pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2
1N5442 ONSEMI

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DIODE VARACTOR DIODE,SINGLE,8.2PF C(T),DO-7, Variable Capacitance Diode
1N5442 KNOX

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GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5442A NJSEMI

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DIODE
1N5442A AEROFLEX

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8.2pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2