1N5415US thru 1N5420US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded packages for thru-hole mounting by deleting the “US”
suffix (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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Surface mount package series equivalent to the
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Fast recovery 3 Amp rectifiers 50 to 600 V
JEDEC registered 1N5415 to 1N5420 series
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Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
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•
•
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Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 50 to 600 Volts.
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•
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High forward surge current capability
Extremely robust construction
Low thermal resistance
JAN, JANTX, JANTXV, and JANS available per MIL-
•
Controlled avalanche with peak reverse power
PRF-19500/411
capability
•
Axial-leaded equivalents also available (see separate
data sheet for 1N5415 thru 1N5420)
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
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Junction Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass with
Storage Temperature: -65oC to +175oC
Tungsten slugs
Thermal Resistance: 10oC/W junction to endcap
TERMINALS: End caps are solid Silver with
Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 539 mg
Thermal Impedance: 1.5oC/W @ 10 ms heating time
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Average Rectified Forward Current (IO): 3 Amps @
TA = 55ºC and 2 Amps @ TA = 100ºC (see Note 1)
•
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Forward Surge Current (8.3 ms half sine): 80 Amps
Solder temperatures: 260oC for 10 s (maximum)
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
AVERAGE
RECTIFIED
CURRENT IO
(NOTE 1)
TYPE
VRWM
VBR @ 50µA
TIME t
rr
MIN.
MAX.
25oC
100oC
µA
55oC
100oC
AMPS
(NOTE 2)
ns
VOLTS
VOLTS
VOLTS
µA
AMPS
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
50V
55V
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
150
3.0
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0
2.0
100V
200V
400V
500V
600V
110V
220V
440V
550V
660V
150
150
150
250
400
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright 2004
11-22-2004 REV A
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503