Datasheet > 1N5415_10

1N5415_10

更新时间： 2024-02-01 07:55:20

品牌	Logo	应用领域
商升特 - SEMTECH		整流二极管
页数	文件大小	规格书
5页	133K
描述
Axial Leaded Hermetically Sealed Fast Rectifier Diode

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中文翻译

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数据手册

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1N5415_10 数据手册

1N5415 THRU 1N5420

3SF05 THRU 3SF6

Axial Leaded Hermetically Sealed

Fast Rectifier Diode

POWER DISCRETES

Description

Features

Quick reference data

u Very low reverse recovery time

u Hermetically sealed in fused metal oxide

u Low switching losses

u Low forward voltage drop

u Soft, non-snap off, recovery characteristics

V_R= 50 - 600V

I_{F =}4.5A

t_rr= 150 - 400nS

I_R= 1.0µA

These products are qualified to MIL-PRF-19500/411.

They can be supplied fully released as JAN, JANTX,

JANTXV and JANS versions.

Absolute Maximum Ratings

Electrical specifications @ T_A= 25°C unless otherwise specified.

1N5415 1N5416 1N5417

1N5418 1N5419 1N5420

Symbol

3SF05

Units

3SF1

3SF2

3SF4

3SF5

3SF6

Working Reverse Voltage

Repetitive Reverse Voltage

V_RWM

V_RRM

100

200

400

500

600

100

200

400

500

600

Average Forward Current

@ 55°C in free air, lead length

0.375"

I_F(AV)

4.5

Repetitive Surge Current

@ 55°C in free air, lead length

0.375"

I_FRM

Non-Repetitive Surge Current

(tp = 8.3mS @ V_R& T_JMAX

)

I_FSM

(tp = 8.3mS, @ V_R& 25°C)

150

Storage Temperature Range

T_STG

-65 to +175

°C

Revision: January 11th, 2010

www.semtech.com

12 3 4 5

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1N5415LEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, HERMETIC SEALED, GPR-3A, 2 P
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