1N5415 thru 1N5420
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 600 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N5415 to 1N5420 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
•
•
•
Fast recovery 3 Amp rectifiers 50 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 50 to 600 Volts.
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/411
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5415US thru 1N5420US)
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
Thermal Resistance: 20oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 1.5oC/W @ 10 ms heating time
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper except for JANS with solid
Silver (Ag) and no finish
•
•
•
•
•
•
•
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
Average Rectified Forward Current (IO): 3 Amps @ TA
= 55ºC and 2 Amps @ TA = 100ºC (see Note 1)
TAPE & REEL option: Standard per EIA-296
WEIGHT: 750 mg
•
•
Forward Surge Current (8.3 ms half sine): 80 Amps
Solder temperatures: 260oC for 10 s (maximum)
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLTAGE
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
AVERAGE
RECTIFIED
CURRENT IO
(NOTE 1)
TYPE
VRWM
V
BR @ 50μA
TIME t
rr
(NOTE 2)
ns
MIN.
MAX.
25oC
100oC
µA
55oC
100oC
AMPS
VOLTS
VOLTS
VOLTS
µA
AMPS
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
50V
55V
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
150
150
150
150
250
400
3.0
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0
2.0
100V
200V
400V
500V
600V
110V
220V
440V
550V
660V
NOTE 1: From 3.0 Amps at TA = 55oC, derate linearly at 22 mA/ oC to 2.0 Amps at TA = 100oC. Above TA = 100oC, derate
linearly to zero at TA = 175 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright © 2008
6-11-2008 REV B
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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