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SILICON RECTIFIER DIODES
DO - 201AD
1N5400 - 1N5408
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
1.00 (25.4)
* High current capability
* High surge current capability
* High reliability
0.208 (5.30)
0.188 (4.80)
MIN.
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.374 (9.50)
0.283 (7.20)
1.00 (25.4)
0.050 (1.28)
0.048 (1.22)
MECHANICAL DATA :
MIN.
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.929 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
1N
1N
1N
1N
1N
1N
1N
1N
RATING
SYMBOL
UNIT
5400 5401 5402 5403 5404 5405 5406 5407 5408
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
800 1000
560 700
800 1000
V
V
V
V
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Current
I
F
3.0
A
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
I
FSM
200
A
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
1.0
5.0
50
Maximum Forward Voltage at I
Maximum DC Reverse Current
at rated DC Blocking Voltage
F
= 3.0 Amps.
Ta = 25 °C
Ta = 100 °C
V
F
V
μA
I
R
I
R(H)
μA
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
C
J
28
pF
15
°C/W
°C
Rθ
JA
TJ
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 04: October 8, 2012