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1N5406G PDF预览

1N5406G

更新时间: 2024-11-19 22:38:07
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
2页 51K
描述
3A GENERAL PURPOSE GPP DIODES

1N5406G 数据手册

 浏览型号1N5406G的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
1N5400G – 1N5406G  
3A  
3A GENERAL PURPOSE GPP DIODES  
Maximum  
Forward  
Maximum Average  
Maximum  
Forward Peak  
Maximum  
Reverse  
Package  
Maximum  
Peak Reverse  
Voltage  
Rectified Current  
@ Half-Wave  
TYPE  
Dimensions  
Voltage  
Surge Current @  
8.3ms Superimposed  
Current @ PRV  
@ TA=25ºC  
@ TA=25ºC  
Resistive Load 60Hz  
PRV  
V PK  
I O @ T L  
I FM (Surge)  
A PK  
I
I FM  
APK  
V FM  
V PK  
R
AAV  
ºC  
µAdc  
50  
1N5400G  
1N5401G  
1N5402G  
1N5403G  
1N5404G  
1N5405G  
1N5406G  
100  
200  
400  
600  
800  
1000  
3.0  
105  
200  
5.0  
3.0  
1.0  
DO –  
201AD  
.375(9.5)  
.335(8.5)  
1.0(25.4)  
MIN  
1.0(25.4)  
MIN  
.052(1.3)  
.048(1.2)  
DIA  
.220(5.6)  
.197(5.0)  
DIA  
DO – 201AD  
34A–1/2  

1N5406G 替代型号

型号 品牌 替代类型 描述 数据表
1N5406 TAITRON

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3.0A STANDARD RECTIFIER

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GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH31-1 RECTRON

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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH34 RECTRON

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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH35 RECTRON

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Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH36 RECTRON

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