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1N5406E

更新时间： 2024-11-21 02:49:23
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
3页 761K
描述
Plastic Silicon Rectifiers

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1N5406E 数据手册

 浏览型号1N5406E的Datasheet PDF文件第2页浏览型号1N5406E的Datasheet PDF文件第3页 
www.hygroup.com.tw  
1N5400E THRU 1N5408E  
Reverse Voltage - 50 to 1000Volts  
Forward Current - 3 Amperes  
Plastic Silicon Rectifiers  
Features  
● Low cost  
DO-201AE  
● Low reverse leakage current  
● Low forward voltage drop  
RoHS  
COMPLIANT  
● High surge capacity  
● Meet UL flammability classification 94V-0  
Mechanical Data  
● Case: JEDEC DO-201AE molded plastic  
● Polarity: Color band denotes cathode  
● Mounting position: Any  
Note: Products with logo  
or  
are made byHY Electronic (Cayman) Limited.  
Applications  
● For use in low voltage, high frequency inverters,  
polarity protection applications  
Package Outline Dimensions in Inches (Millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristics  
Symbol  
Unit  
5400E 5401E 5402E 5403E 5404E 5405E 5406E 5407E 5408E  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
3.0  
500  
350  
500  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC Blocking Voltage  
100  
1000  
I(AV)  
Maximum Average Forward Rectified Current @TA=55 ℃  
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,  
Superimposed on Rated Load (JEDEC Method)  
IFSM  
200  
A
I2t Rating for Fusing (t<8.3mS)  
I2t  
A2s  
V
166  
1.0  
5.0  
50  
Peak Forward Voltage at 3.0A DC (Note1)  
Maximum DC Reverse Current @TJ=25℃  
at Rated DC Blocking Voltage @TJ=100℃  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
VF  
IR  
uA  
50  
35  
CJ  
RθJA  
TJ  
pF  
℃/W  
℃
15  
-55 to+150  
-55 to+150  
TSTG  
℃
Notes: 1. 300uS pulse width, 2%duty cycle. 300uS  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. The typical data above is for reference only .  
1N540*-A/B/T-00/99-00/01  
Rev. 11, 18-May-2020  
123

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与1N5406E相关器件

型号 品牌 获取价格 描述 数据表
1N5406-E3 VISHAY

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 		General Purpose Plastic Rectifier
1N5406-E3/100 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/4E VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/4F VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/4G VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/4H VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/51 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/53 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/56 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406-E3/64 VISHAY

获取价格

 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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