Datasheet > 1N5406-T

1N5406-T

更新时间： 2024-11-09 19:38:07

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
4页	422K
描述
Rectifier Diode

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中文翻译

获取价格

技术参数
数据手册

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1N5406-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.89
Is Samacsys：	N	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

1N5406-T 数据手册

M C C

1N5400

THRU

1N5408

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

Low Current Leakage

Low Forward Voltage

High Current Capability

3 Amp Rectifier

50 - 1000 Volts

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

DO-201AD

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

500V

600V

800V

1000V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N5400

1N5401

1N5402

1N5404

1N5405

1N5406

1N5407

1N5408

1N5400

1N5401

1N5402

1N5404

1N5405

1N5406

1N5407

1N5408

35V

70V

140V

280V

350V

50V

100V

200V

400V

500V

Cathode

Mark

420V

560V

700V

600V

800V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

3.0A

T_a= 105°C

Peak Forward Surge

Current

I_FSM

200A

8.3ms, half sine

DIMENSIONS

INCHES

MAX

Forward Voltage

V_F

I_R

1.0V

I_F= 3.0A;

T = 25°C

DIM

MIN

.287

.189

MIN

7.30

4.80

1.20

25.40

MAX

9.50

5.30

1.30

---

NOTE

.374

.208

.052

---

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.048

1.000

5.0mA

100mA

T_a= 25°C

T_a= 150°C

Typical Junction

Capacitance

C_J

40pF

Measured at

1.0MHz, V_R=4.0V

www.mccsemi.com

Revision: 9

2006/04/30

1 of 4

12 3 4

中文翻译

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与1N5406-T相关器件

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1N5406T/R	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406-T/R	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
1N5406-T3	WTE	获取价格	3.0A SILICON RECTIFIER
1N5406-T3-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
1N5406-TB	WTE	获取价格	3.0A SILICON RECTIFIER
1N5406T-G	COMCHIP	获取价格	Rectifier Diode,
1N5406-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
1N5406-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406TR	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5407	CYSTEKEC	获取价格	3.0Amp Silicon Rectifiers