Datasheet > 1N5406

1N5406

更新时间： 2024-04-09 18:58:04

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Standard Rectifiers

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1N5406 数据手册

www.eicsemi.com

SILICON RECTIFIER DIODES

DO - 201AD

1N5400 - 1N5408

PRV : 50 - 1000 Volts

Io : 3.0 Amperes

FEATURES :

1.00 (25.4)

* High current capability

* High surge current capability

* High reliability

0.208 (5.30)

0.188 (4.80)

MIN.

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.374 (9.50)

0.283 (7.20)

1.00 (25.4)

0.050 (1.28)

0.048 (1.22)

MECHANICAL DATA :

MIN.

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.929 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

5400 5401 5402 5403 5404 5405 5406 5407 5408

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

100

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

100

Maximum Average Forward Current

3.0

0.375"(9.5mm) Lead Length Ta = 75 °C

Peak Forward Surge Current

FSM

200

8.3ms Single half sine wave Superimposed on

rated load (JEDEC Method)

1.0

5.0

Maximum Forward Voltage at I

Maximum DC Reverse Current

at rated DC Blocking Voltage

= 3.0 Amps.

Ta = 25 °C

Ta = 100 °C

μA

R(H)

μA

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

°C/W

°C

Rθ

- 65 to + 175

Storage Temperature Range

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 04: October 8, 2012

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