5秒后页面跳转
1N5405G PDF预览

1N5405G

更新时间: 2024-09-09 06:17:55
品牌 Logo 应用领域
顺烨 - SHUNYE 二极管
页数 文件大小 规格书
2页 991K
描述
GLASS PASSIVATED SILICON RECTIFIER

1N5405G 数据手册

 浏览型号1N5405G的Datasheet PDF文件第2页 
1N5400G THRU 1N5408G  
GLASS PASSIVATED SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes  
FEATURES  
DO-201AD  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
molded plastic technique  
1.0 (25.4)  
MIN.  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
0.220 (5.6)  
0.197(5.0)  
DIA.  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375(9.5)  
0.285(7.2)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
0.052 (1.3)  
0.048 (1.2)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.04 ounce, 1.10 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
SYMBOLS  
UNITS  
5408G  
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50 100 200 300 400 500 600 800 1000  
35 70 140 210 280 350 420 560 700  
VRRM  
VRMS  
VDC  
50 100 200 300 400 500 600 800 1000  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I(AV)  
3.0  
Amps  
IFSM  
200  
1.2  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
Maximum instantaneous forward voltage at 3.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100  
µ
A
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
30.0  
20.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +175  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
www.shunyegroup.com  

与1N5405G相关器件

型号 品牌 获取价格 描述 数据表
1N5405G-B DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N5405G-E GULFSEMI

获取价格

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5405GM GULFSEMI

获取价格

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5405GP MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 3A, Silicon, DO-201AD,
1N5405GPE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 3A, Silicon, DO-201AD,
1N5405G-T DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N5405-GT3 SENSITRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 500V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5405K SEMTECH

获取价格

SILICON RECTIFIERS
1N5405K SEMIKRON

获取价格

Standard silicon rectifier diodes
1N5405K DIOTEC

获取价格

Silicon Rectifiers