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1N5405 PDF预览

1N5405

更新时间: 2024-11-19 06:23:15
品牌 Logo 应用领域
强茂 - PANJIT 二极管
页数 文件大小 规格书
2页 43K
描述
HIGH CURRENT PLASTIC SILICON RECTIFIER

1N5405 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.27其他特性:LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:500 V子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5405 数据手册

 浏览型号1N5405的Datasheet PDF文件第2页 
1N5400~1N5408  
HIGH CURRENT PLASTIC SILICON RECTIFIER  
Unit: inch(mm)  
DO-201AD  
CURRENT  
3.0 Ampere  
VOLTAGE  
50 to 1000 Volts  
FEATURES  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
.052(1.3)  
.048(1.2)  
• High current capability  
• Low leakage  
• Exceeds environmental standards of MIL-S-19500/228  
In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: DO-201AD Molded plastic  
• Lead: Axial leads, solderable per MIL-STD-750,Method 2026  
guaranteed  
.210(5.3)  
.188(4.8)  
• Polarity: Color band denotes cathode end  
• Mounting Position: Any  
• Weight: 0.04 ounces, 1.1 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load,derate current by 20%.  
PARAMETER  
SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNITS  
Maximum Recurrent Peak Reverse Voltage  
VR R M  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
3.0  
500  
350  
500  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
A
V
Maximum RMS Voltage  
VR M  
S
Maximum DC Blocking Voltage  
VD  
100  
1000  
C
Maximum Average Forward Current .375"(9.5mm)  
IF  
T
A =55 O C  
( A V  
)
lead length at  
Peak Forward Surge Current  
:
8.3ms single half sine-wave  
IF  
200  
1.2  
S
M
superimposed on rated load(JEDEC method)  
Maximum Forward Voltage at 3.0A  
VF  
Maximum DC Reverse Current at TJ =25O  
Rated DC Blocking Voltage TJ =100O  
C
5.0  
1000  
IR  
uA  
pF  
C
Typical Junction capacitance (Note 1)  
Typical Thermal Resistance(Note 2)  
CJ  
Rθ J A  
J ,TS  
30  
20  
O C  
/
W
Operating Junction and Storage Temperature Range  
T
-55 TO +150  
O C  
T G  
NOTES:  
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.  
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.  
STAD-APR.09.2007  
PAGE . 1  

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