Datasheet > 1N5402G

1N5402G

更新时间： 2024-10-27 22:38:03

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	51K
描述
3A GENERAL PURPOSE GPP DIODES

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数据手册
替代型号

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1N5402G 数据手册

LESHAN RADIO COMPANY, LTD.

1N5400G – 1N5406G

3A GENERAL PURPOSE GPP DIODES

Maximum

Forward

Maximum Average

Maximum

Forward Peak

Maximum

Reverse

Package

Maximum

Peak Reverse

Voltage

Rectified Current

@ Half-Wave

TYPE

Dimensions

Voltage

Surge Current @

8.3ms Superimposed

Current @ PRV

@ T_A=25ºC

Resistive Load 60Hz

PRV

V _PK

I _O@ T _L

I _FM(Surge)

A _PK

I _FM

A_PK

V _FM

V _PK

A_AV

ºC

µAdc

1N5400G

1N5401G

1N5402G

1N5403G

1N5404G

1N5405G

1N5406G

100

200

400

600

800

1000

3.0

105

200

5.0

3.0

1.0

DO –

201AD

.375(9.5)

.335(8.5)

1.0(25.4)

MIN

1.0(25.4)

MIN

.052(1.3)

.048(1.2)

DIA

.220(5.6)

.197(5.0)

DIA

DO – 201AD

34A–1/2

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1N5402G 替代型号

型号	品牌	替代类型	描述	数据表
FR303	EIC	类似代替	FAST RECOVERY RECTIFIER DIODES
1N5402	TAITRON	功能相似	3.0A STANDARD RECTIFIER

与1N5402G相关器件

型号	品牌	获取价格	描述	数据表
1N5402-G	COMCHIP	获取价格	General Purpose Rectifier
1N5402G-13	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
1N5402G-B	DIODES	获取价格	3.0A GLASS PASSIVATED RECTIFIER
1N5402G-E	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5402GH32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
1N5402GH36	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
1N5402GH36-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
1N5402GH36-4	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
1N5402G-K	TSC	获取价格	3A, 50V - 1000V Glass Passivated Rectifier
1N5402GM	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A