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1N5402-BC01-TP PDF预览

1N5402-BC01-TP

更新时间: 2024-02-03 11:46:03
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 144K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

1N5402-BC01-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:DO-201AD, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
其他特性:METALURGICALLY BONDED, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5402-BC01-TP 数据手册

 浏览型号1N5402-BC01-TP的Datasheet PDF文件第2页浏览型号1N5402-BC01-TP的Datasheet PDF文件第3页 
M C C  
1N5400-BC01  
THRU  
1N5408-BC01  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Forward Voltage  
3 Amp Rectifier  
50 to 1000 Volts  
High Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
B
D
RMS  
DC  
Voltage  
Blocking  
Voltage  
1N5400-BC01  
1N5401-BC01  
1N5402-BC01  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
E
100V  
200V  
1N5404-BC01  
1N5406-BC01  
1N5407-BC01  
1N5408-BC01  
---  
---  
---  
---  
400V  
600V  
800V  
1000V  
280V  
420V  
560V  
700V  
400V  
600V  
800V  
1000V  
A
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
MM  
MIN  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 3.0A;  
TJ = 25°C*  
DIM  
MAX  
MAX  
NOTE  
A
B
C
D
E
.590  
.122  
.280  
.188  
.048  
.610  
.142  
.370  
.250  
.052  
15.0  
3.10  
7.20  
4.80  
1.20  
15.5  
3.60  
9.50  
6.40  
1.30  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 3  
2002/12/31  

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