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1N5400 PDF预览

1N5400

更新时间: 2024-11-29 12:32:27
品牌 Logo 应用领域
TYSEMI 二极管
页数 文件大小 规格书
2页 126K
描述
Diffused Junction High Current Capability and Low Forward Voltage Drop

1N5400 数据手册

 浏览型号1N5400的Datasheet PDF文件第2页 
Product specification  
1N5400-1N5408  
Features  
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
Surge Overload Rating to 200A Peak  
Low Reverse Leakage Current  
MaximumRatingsandElectricalCharacteristics @ TA = 25 unless otherwise specified  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Parameter  
Symbol  
Unit  
V
5400 5401 5402 5404 5406 5407 5408  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800 1000  
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
3.0  
560  
700  
V
A
Average Rectified Output Current @ TA = 105 *1  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
A
1.0  
10  
Forward Voltage @ IF = 3.0A  
VFM  
IRM  
Cj  
V
A
Peak Reverse Current  
@ TA = 25  
100  
at Rated DC Blocking Voltage @ TA = 150  
Typical Junction Capacitance *2  
50  
25  
pF  
15  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
R JA  
K/W  
-65 to 150  
Tj, TSTG  
*1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
*2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
1 of 2  
http://www.twtysemi.com  
4008-318-123  
sales@twtysemi.com  

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