5秒后页面跳转
1N5399G PDF预览

1N5399G

更新时间: 2024-11-22 22:38:03
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 20K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N5399G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
风险等级:5.38Is Samacsys:N
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:1000 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5399G 数据手册

 浏览型号1N5399G的Datasheet PDF文件第2页 
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N5391G - 1N5399G  
PRV : 50 - 1000 Volts  
Io : 1.5 Amperes  
DO - 41  
FEATURES :  
1.00 (25.4)  
* Glass passivated chip  
* High current capability  
* High reliability  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
* Low reverse current  
* Low forward voltage drop  
0.205 (5.2)  
0.166 (4.2)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.339 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
RATING  
SYMBOL  
UNIT  
5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800 1000 Volts  
560 700 Volts  
Maximum DC Blocking Voltage  
100  
800 1000 Volts  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 75°C  
Peak Forward Surge Current  
IF(AV)  
1.5  
Amps.  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
50  
Amps.  
Volts  
Maximum Forward Voltage at IF = 1.5 Amps.  
1.1  
Maximum DC Reverse Current Ta = 25 °C  
IR  
IR(H)  
CJ  
5.0  
50  
15  
30  
mA  
mA  
at rated DC Blocking Voltage  
Ta = 100 °C  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
°C/W  
°C  
RqJA  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : AUGUST 2, 1998  

与1N5399G相关器件

型号 品牌 获取价格 描述 数据表
1N5399-G COMCHIP

获取价格

Axial Silastic Guard Junction Standard Rectifier
1N5399GP FCI

获取价格

1.5 Amp MEGARECTIFIERS
1N5399GP GULFSEMI

获取价格

SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
1N5399GP LUNSURE

获取价格

1.5 Amp Glass Passivated Rectifier 50-1000 Volts
1N5399GP VISHAY

获取价格

GLASS PASSIVATED JUNCTION RECTIFIER
1N5399GP MCC

获取价格

1.5 Amp Glass Passivated Rectifier 50 - 1000 Volts
1N5399GP SURGE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon, DO-15, DO-15, 2 PIN
1N5399GP/100 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15
1N5399GP/100-E3 VISHAY

获取价格

DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier
1N5399GP/4E VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15