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1N5399G PDF预览

1N5399G

更新时间: 2024-01-24 15:16:15
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 62K
描述
1.5A GLASS PASSIVATED RECTIFIER

1N5399G 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-15包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.03其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5399G 数据手册

 浏览型号1N5399G的Datasheet PDF文件第2页 
1N5391G - 1N5399G  
1.5A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
·
Surge Overload Rating to 50A Peak  
Low Reverse Leakage Current  
Plastic Material - UL Flammability  
Classification 94V-0  
C
D
Mechanical Data  
DO-15  
Min  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Dim  
A
Max  
25.40  
5.50  
7.62  
0.889  
3.6  
B
·
·
·
Polarity: Cathode Band  
Weight: 0.4 grams (approx)  
Marking: Type Number  
C
0.686  
2.60  
D
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N53  
91G  
1N53  
92G  
1N53  
93G  
1N53  
95G  
1N53  
97G  
1N53  
98G  
1N53  
99G  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
1.5  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 55°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
50  
A
Forward Voltage  
@ IF = 1.5A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TA 25°C  
=
5.0  
200  
µA  
@ TA = 100°C  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
Cj  
10.4  
15  
A2s  
pF  
Typical Junction Capacitance (Note 2)  
RqJA  
Tj, TSTG  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
80  
K/W  
°C  
-65 to +175  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS30194 Rev. A-2  
1 of 2  
1N5391G - 1N5399G  

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