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1N5398S-GT3 PDF预览

1N5398S-GT3

更新时间： 2024-09-18 14:33:43
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
3页 136K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

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1N5398S-GT3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DO-15
包装说明：PLASTIC PACKAGE-2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.05
其他特性：HIGH RELIABILITY应用：GENERAL PURPOSE
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
湿度敏感等级：1最大非重复峰值正向电流：50 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：1.5 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：800 V
表面贴装：NO端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N5398S-GT3 数据手册

 浏览型号1N5398S-GT3的Datasheet PDF文件第2页浏览型号1N5398S-GT3的Datasheet PDF文件第3页 
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SENSITRON  
1N5391S – 1N5399S  
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SEMICONDUCTOR  
1.5A SILICON RECTIFIER  
Data Sheet 2579, Rev. —  
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Features  
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Diffused Junction  
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Fast Switching for High Efficiency  
High Current Capability and Low Forward Voltage Drop  
Low Reverse Leakage Current  
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Surge Overload Rating to 50 A Peak  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢃꢀ  
Plastic Material – UL Flammability Classification Rating 94V-0  
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DO-41  
Max  
—
Mechanical Data  
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Dim  
A
Min  
Min  
Max  
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Case: Molded Plastic  
25.4  
1.000  
—
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Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
4.06 5.21 0.159 0.205  
0.71 0.864 0.028 0.034  
2.00 2.72 0.079 0.107  
C
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D
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Weight: 0.30 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
In mm  
In inch  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
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Single Phase, half wave, 60Hz, resistive or inductive load.  
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For capacitive load, derate current by 20%.  
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1N  
1N  
1N  
1N  
1N  
1N  
1N  
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Characteristic  
Symbol  
Unit  
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5391S 5392S 5393S 5395S 5397S 5398S 5399S  
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Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.5  
700  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 70°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
50  
A
Forward Voltage  
@IF = 1.5A  
VFM  
IRM  
1.1  
V
µA  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
50  
Typical Junction Capacitance (Note 2)  
Cj  
20  
55  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
RθJA  
K/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-65 to +150  
-65 to +150  
°C  
°C  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
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