1N5398

更新时间： 2024-11-07 05:56:35

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
2页	26K
描述
SILICON RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5398 数据手册

1N5391

THRU

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N5399

SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes

FEATURES

* Low cost

* Low leakage

* Low forward voltage drop

* High current capability

DO-15

MECHANICAL DATA

* Case: Molded plastic

(

)

.034 0.9

* Epoxy: Device has UL flammability classification 94V-O

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

DIA.

(

)

.028 0.7

(

)

1.0 25.4

MIN.

* Weight: 0.38 gram

(

)

.300 7.6

(

)

.230 5.8

(

)

.140 3.6

DIA.

(

)

.104 2.6

(

)

1.0 25.4

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNITS

RRM

RMS

100

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

800

560

800

1000

700

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

1.5

Amps

.375” (9.5mm) lead length at TL

= 70^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

Typical Junction Capacitance (Note)

Typical Thermal Resistance

⁰C/ W

⁰C

R θ J A

, TSTG

-65 to + 175

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

SYMBOL

1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 UNITS

CHARACTERISTICS

1.4

5.0

Volts

Maximum Instantaneous Forward Voltage at 1.5A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

= 25^oC

= 100^oC

uAmps

Maximum Full Load Reverse Current Average, Full Cycle

.375” (9.5mm) lead length at T

= 75^oC

NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts

uAmps

2001-5

中文翻译

下载PDF

与1N5398相关器件

型号	品牌	获取价格	描述	数据表
1N5398(G)	LGE	获取价格	暂无描述
1N5398/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/64	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5398/65	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,

与1N5398相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5398

1N5398 数据手册

与1N5398相关器件

与1N5398相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5398

1N5398 数据手册

与1N5398相关器件

与1N5398相关文章

您还可以找

您在本页遇到什么问题？