Datasheet > 1N5397

1N5397

更新时间： 2024-11-06 06:20:47

品牌	Logo	应用领域
顺烨 - SHUNYE		二极管
页数	文件大小	规格书
2页	259K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

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数据手册

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1N5397 数据手册

1N5391 THRU 1N5399

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5Amperes

FEATURES

DO-15

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

1.0 (25.4)

MIN.

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.140 (3.6)

0.104(2.6)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.300(7.6)

0.230(5.8)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-15 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034 (0.90)

0.028 (0.70)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.014 ounce, 0.40 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

1N 1N 1N

SYMBOLS

UNITS

5391 5392 5393 5394 5395 5396 5397 5398 5399

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000 VOLTS

35 70 140 210 280 350 420 560 700 VOLTS

50 100 200 300 400 500 600 800 1000 VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

1.5

Amps

IFSM

50.0

1.4

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 1.5A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

50.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

20.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与1N5397相关器件

型号	品牌	获取价格	描述	数据表
1N5397(G)	LGE	获取价格	暂无描述
1N5397/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/60	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
1N5397/64	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,

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