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1N5391GS PDF预览

1N5391GS

更新时间: 2024-11-26 15:18:27
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 207K
描述
DO-41

1N5391GS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DO-41, 2 PINReach Compliance Code:unknown
风险等级:5.6其他特性:HIGH RELIABILITY, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
最大反向电流:2.5 µA表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N5391GS 数据手册

 浏览型号1N5391GS的Datasheet PDF文件第2页浏览型号1N5391GS的Datasheet PDF文件第3页浏览型号1N5391GS的Datasheet PDF文件第4页 
RoHS  
1N5391GS THRU 1N5399GS  
General Purpose Rectifier  
COMPLIANT  
Features  
● High efficiency  
● High current capability  
● High reliability  
● High surge current capability  
● Low power loss  
● Glass passivated chip junction  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
For use in general purpose rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: DO-204AL(DO-41)  
P
Molding compound meets UL 94 V-0 flammability rating,  
RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
■Maximum Ratings  
1N5391GS 1N5392GS 1N5393GS 1N5395GS 1N5397GS 1N5398GS 1N5399GS  
SYMBOLUNIT  
PARAMETER  
1N5391GS 1N5392GS 1N5393GS 1N5395GS 1N5397GS 1N5398GS 1N5399GS  
Device marking code  
V
V
V
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
V
100  
1000  
Maximum DC blocking Voltage  
DC  
Average Forward Current  
IF(AV)  
A
A
1.5  
@60Hz sine wave, Resistance load, Ta  
=75  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
50  
IFSM  
100  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t8.3≤ms Tj=25 Rating of pe  
diode  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse  
Voltage of 4.0 V.D.C  
A2s  
pF  
I2t  
Cj  
10.375  
13  
T
-55 ~ +150  
-55 ~ +150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
1N5391GS1N5392GS1N5393GS1N5395GS1N5397GS1N5398GS1N5399GS  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per  
diode  
V
F
I
=1.5A  
FM  
V
1.1  
2.5  
50  
T =25℃  
j
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
I
μA  
R
T =125℃  
j
1 / 4  
S-A493  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.2, 30-Jan-21  

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