Datasheet > 1N5391_V01

1N5391_V01

更新时间： 2024-11-02 01:25:51

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	621K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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1N5391_V01 数据手册

1N5391 THRU 1N5399

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere

GENERAL PURPOSE SILICON RECTIFIER

DO-15

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0



1.0 (25.4)

MIN.

Construction utilizes void-free molded plastic technique

Low reverse leakage



0.140 (3.6)

0.104(2.6)

DIA.

High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

0.300(7.6)

0.230(5.8)

Mechanical Data

1.0 (25.4)

MIN.

Case : JEDEC DO-15 Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

0.034 (0.86)

0.028 (0.70)

DIA.

Weight

: 0.014 ounce, 0.40 grams

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

Ratings at 25°C ambient temperature unlss otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

5391 5392 5393 5394 5395 5396 5397

UNITS

SYMBOLS

MDD MDD MDD MDD MDD MDD MDD

Marking Code

5391 5392 5393 5394 5395 5396 5397

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

V^RMS

V^DC

100

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=75°C

Peak forward surge current

I^(AV)

1.5

I^FSM

50.0

1.4

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

V^F

I^R

Maximum instantaneous forward voltage at 1.5A

Maximum DC reverse current

at rated DC blocking voltage

T^A=25°C

5.0

50.0

T^A=100°C

°C/W

°C

Typical junction capacitance (NOTE 1)

C^J

20.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

R^θ^JA

-50 to +150

T^J^,T^STG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T19816A0

https://www.microdiode.com

Rev:2019A0

Page :1

中文翻译

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与1N5391_V01相关器件

型号	品牌	获取价格	描述	数据表
1N5391-13	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-15,
1N5391-A	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon,
1N5391-B	MCC	获取价格	Rectifier Diode
1N5391-B	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLA
1N5391-B	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
1N5391-B	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon
1N5391BK	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-41,
1N5391-BP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 50V V(RRM), Silicon, DO-15, HALOGEN FREE AND RO
1N5391E3	VISHAY	获取价格	DIODE 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, R
1N5391-E3	VISHAY	获取价格	DIODE 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, R

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