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1N5364C

更新时间： 2024-11-01 22:52:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管齐纳二极管测试
页数 文件大小 规格书
3页 214K
描述
Silicon 5 Watt Zener Diodes

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中文翻译

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1N5364C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：O-PALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.17外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：200 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W标称参考电压：33 V
子类别：Voltage Reference Diodes表面贴装：NO
技术：ZENER端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：2%
工作测试电流：40 mABase Number Matches：1

1N5364C 数据手册

 浏览型号1N5364C的Datasheet PDF文件第2页浏览型号1N5364C的Datasheet PDF文件第3页 
1N5333B thru 1N5388B  
Silicon 5 Watt Zener Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt  
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with  
different tolerances as identified by specific suffix letter on the part number.  
These plastic encapsulated Zeners have moisture classification of Level 1  
with no dry pack required and are also available in various military  
equivalent screening levels by adding a prefix identifier as also described in  
the Features section. They may be operated at high maximum dc currents  
with adequate heat sinking with their comparatively low thermal resistance  
design. Microsemi also offers numerous other Zener products to meet  
higher and lower power applications.  
T-18  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
JEDEC registered 1N5333 to 1N5388B  
Zener voltage available 3.3V to 200V  
• Regulates voltage over a broad operating current and  
temperature range  
• Wide selection from 3.3 to 200 V  
Standard voltage tolerances are plus/minus 5%  
with B suffix and 10 % with A suffix identification  
• Flexible axial-lead mounting terminals  
• Nonsensitive to ESD per MIL-STD-750 Method 1020  
• Withstands high surge stresses  
•
•
Tight tolerances available in plus or minus 2% or  
1% with C or D suffix respectively  
Options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, JANTXV, and  
JANS are available by adding MQ, MX, MV, or  
MSP prefixes respectively to part numbers.  
Surface mount equivalents available as  
SMBJ5333 to SMBJ5388B, or SMBG5333B to  
SMBG5388B  
• Minimal changes of voltage versus current as  
specified by voltage regulation (∆VZ)  
• High specified maximum current (IZM) when  
adequately heat sunk  
•
• Moisture classification is Level 1 per IPC/JEDEC J-  
STD-020B with no dry pack required  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Power dissipation at 25ºC: 5.0 watts (also see  
derating in Figure 1).  
•
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
Operating and Storage temperature: -65ºC to  
+150ºC  
TERMINALS: Leads, tin-lead plated solderable per  
MIL-STD-750, method 2026  
POLARITY: Cathode indicated by band. Diode to  
be operated with the banded end positive with  
respect to the opposite end.  
Thermal Resistance: 25 ºC/W junction to lead at  
3/8 (10 mm) lead length from body, or 85ºC/W  
junction to ambient when mounted on FR4 PC  
board (1oz Cu) with 4 mm2 copper pads and  
track width 1 mm, length 25 mm  
•
•
MARKING: Part number  
TAPE & REEL option: Standard per EIA-296 (add  
•
Steady-State Power: 5 watts at TL < 25oC 3/8  
inch (10 mm) from body, or 1.47 watts at TA =  
25ºC when mounted on FR4 PC described for  
thermal resistance (also see Figure 1)  
“TR” suffix to part number)  
•
•
WEIGHT: 0.7 grams  
See package dimensions on last page  
•
•
Forward voltage @1.0 A: 1.2 volts (maximum)  
Solder Temperatures: 260 ºC for 10 s (max)  
Copyright 2003  
Microsemi  
Page 1  
7-23-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

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