Datasheet > 1N5357B

1N5357B

更新时间： 2024-11-25 20:22:07

品牌	Logo	应用领域
鲁光 - LGE		IOT 测试二极管
页数	文件大小	规格书
5页	3262K
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技术参数
数据手册

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1N5357B 技术参数

Case Style：	DO-15	Pd（W）：	5
VZ(Min)：	-	VZ(Nom)：	20
VZ(Max)：	-	IZT(mA)：	65
IR(uA)：	0.5	VR(V)：	14.4
class：	Diodes

1N5357B 数据手册

1N5333B-1N5388B

Zener Diode

POWER DISSIPATION: 5.0 W

DO-15

Features

Silicon planar power zener diodes

For use in stabilizing and clipping curcuits with high

power rating.

Standard zener voltage tolerance is ±10%. Add

suffix"B" for ±5% tolerance. other zener voltage

and tolerances are available upon request.

Mechanical Data

Case:DO-15

Dimensions in inches and (millimeters)

Polarity: cathode Band

Marking: type number

Approx. weight: 0.40grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

SYMBOL

VALUE

UNIT

Zener current (see Table "Characteristics")

DC pow er dissipation @ T_L=75, measure at zero lead length (Fig.1)

derate above 75 (NOTE1)

5.0

40.0

P_D

Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated

I_FSM

see fig.5

-55---+150

load (JEDEC Method)(NOTE1,2)

Junction temperature

T_J

T_s

Storage temperature range

NOTES: (1) Mounted on 8.0mm²copper pads to each terminal.

(2) 8.3ms single half sine-wave, or equivalent square wave, duty cycle=4 pulses per minute maximum.

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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