Datasheet > 1N5357AE3TR

1N5357AE3TR

更新时间： 2024-11-25 16:51:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	150K
描述
Zener Diode, 20V V(Z), 10%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

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1N5357AE3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.22	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	3 Ω
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
标称参考电压：	20 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	10%	工作测试电流：	65 mA
Base Number Matches：	1

1N5357AE3TR 数据手册

1N5333B thru 1N5388B, e3

Silicon 5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt

Zeners provides voltage regulation in a selection from 3.3 to 200 volts with

different tolerances as identified by specific suffix letter on the part number.

These plastic encapsulated Zeners have moisture classification of Level 1

with no dry pack required and are also available in various military

equivalent screening levels by adding a prefix identifier as also described in

the Features section. They may be operated at high maximum dc currents

with adequate heat sinking with their comparatively low thermal resistance

design. Microsemi also offers numerous other Zener products to meet

higher and lower power applications.

T-18

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N5333 to 1N5388B

Zener voltage available 3.3V to 200V

• Regulates voltage over a broad operating current and

temperature range

• Wide selection from 3.3 to 200 V

Standard voltage tolerances are plus/minus 5% with B

suffix and 10 % with A suffix identification

• Flexible axial-lead mounting terminals

• Nonsensitive to ESD per MIL-STD-750 Method 1020

• Withstands high surge stresses

• Minimal changes of voltage versus current as

specified by voltage regulation (ΔV_Z)

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available

by adding MQ, MX, or MV prefixes respectively to

part numbers.

• High specified maximum current (I_ZM) when

adequately heat sunk

•

Surface mount equivalents available as SMBJ5333 to

SMBJ5388B, or SMBG5333B to SMBG5388B

• Moisture classification is Level 1 per IPC/JEDEC J-

STD-020B with no dry pack required

RoHS Compliant devices available by adding e3 suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 5.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

TERMINALS: Leads, Tin-Lead or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, method 2026

+150^ºC

Thermal Resistance: 25 ^ºC/W junction to lead at 3/8

(10 mm) lead length from body, or 85^ºC/W junction

to ambient when mounted on FR4 PC board (1oz

Cu) with 4 mm²copper pads and track width 1

mm, length 25 mm

Steady-State Power: 5 watts at T_L< 25^oC 3/8 inch

(10 mm) from body, or 1.47 watts at T_A= 25^ºC

when mounted on FR4 PC described for thermal

resistance (also see Figure 1)

•

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end.

•

MARKING: Part number

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.7 grams

See package dimensions on last page

•

Forward voltage @1.0 A: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

8-06-2008 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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1N5357AE3TR 替代型号

型号	品牌	替代类型	描述	数据表
1N5357BRLG	ONSEMI	功能相似	5 Watt Surmetic TM 40 Zener Voltage Regulators
1N5357BG	ONSEMI	功能相似	5 Watt Surmetic TM 40 Zener Voltage Regulators
1N5357B	DIOTEC	功能相似	Silicon-Power-Z-Diodes (non-planar technology)

与1N5357AE3TR相关器件

型号	品牌	获取价格	描述	数据表
1N5357ARL	MOTOROLA	获取价格	Diode,
1N5357ATR	MICROSEMI	获取价格	Silicon 5 Watt Zener Diodes
1N5357B	SUNMATE	获取价格	5.0W axial zener diode DO-15 20V series
1N5357B	KISEMICONDUCTOR	获取价格	5 Watt Zener Diode 5.1 to 200 Volts
1N5357B	FRONTIER	获取价格	5 WATT SILICON ZENER DIODE
1N5357B	DIODES	获取价格	5W ZENER DIODE
1N5357B	BOCA	获取价格	5 Watt Surmetic 40 Silicon Zener Diodes
1N5357B	DIOTEC	获取价格	Silicon-Power-Z-Diodes (non-planar technology)
1N5357B	STMICROELECTRONICS	获取价格	5W SILICON ZENER DIODES
1N5357B	MICROSEMI	获取价格	Silicon 5 Watt Zener Diodes

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