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1N5301TRPBFREE PDF预览

1N5301TRPBFREE

更新时间: 2024-11-17 07:50:31
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CENTRAL /
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2页 343K
描述
Current Regulator Diode, 1.4mA I(S), 1.55V V(L), Silicon,

1N5301TRPBFREE 数据手册

 浏览型号1N5301TRPBFREE的Datasheet PDF文件第2页 
1N5283 THRU 1N5314  
www.centralsemi.com  
SILICON CURRENT LIMITING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1N5283 series  
types are silicon field effect current regulator diodes  
designed for applications requiring a constant  
current over a wide voltage range. These devices  
are manufactured in the cost effective DO-35 double  
plug case which provides many benefits to the  
user, including space savings and improved thermal  
characteristics. Special selections of I (regulator  
P
current) are available for critical applications.  
DO-35 CASE  
FEATURES:  
• High Reliability  
• Superior Lot To Lot Consistency  
• Surface Mount Devices Available  
• Special Selections Available  
MAXIMUM RATINGS: (T =75°C)  
Peak Operating Voltage  
Power Dissipation  
Operating and Storage Junction Temperature  
SYMBOL  
UNITS  
V
mW  
°C  
L
P
P
T , T  
100  
600  
-65 to +200  
OV  
D
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
Regulator  
Current  
(Note 1)  
Minimum  
Dynamic  
Impedance  
Minimum  
Knee  
Impedance  
Maximum  
Limiting  
Voltage  
Type  
I
@ V =25V  
T
Z
@ V =25V  
Z
@ V =6.0V  
V
@ I =0.8 x I MIN  
P
T
T
K
K
L
L
P
MIN  
mA  
NOM  
mA  
MAX  
mA  
MΩ  
MΩ  
V
1N5283  
1N5284  
1N5285  
1N5286  
1N5287  
1N5288  
1N5289  
1N5290  
1N5291  
1N5292  
1N5293  
1N5294  
1N5295  
1N5296  
1N5297  
1N5298  
0.187  
0.204  
0.230  
0.255  
0.281  
0.332  
0.366  
0.400  
0.476  
0.527  
0.578  
0.638  
0.697  
0.774  
0.850  
0.935  
0.22  
0.24  
0.27  
0.30  
0.33  
0.39  
0.43  
0.47  
0.56  
0.62  
0.68  
0.75  
0.82  
0.91  
1.00  
1.10  
0.253  
0.276  
0.311  
0.345  
0.380  
0.449  
0.495  
0.541  
0.644  
0.713  
0.782  
0.863  
0.943  
1.05  
25  
19  
2.75  
2.35  
1.95  
1.60  
1.35  
1.00  
0.87  
0.75  
0.56  
0.47  
0.40  
0.335  
0.29  
0.24  
0.205  
0.18  
1.0  
1.0  
14  
1.0  
9.0  
1.0  
6.6  
1.0  
4.1  
1.05  
1.05  
1.05  
1.10  
1.13  
1.15  
1.20  
1.25  
1.29  
1.35  
1.40  
3.3  
2.7  
1.90  
1.55  
1.35  
1.15  
1.00  
0.88  
0.80  
0.70  
1.15  
1.27  
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by I NOM (mA)  
P
R4 (7-February 2013)  

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SILICON CURRENT LIMITING DIODE DESCRIPTION: