Datasheet > 1N5276B

1N5276B

更新时间： 2024-09-16 04:24:27

品牌	Logo	应用领域
CDIL		二极管齐纳二极管测试局域网
页数	文件大小	规格书
5页	142K
描述
SILICON PLANAR ZENER DIODES

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中文翻译

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数据手册

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1N5276B 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR ZENER DIODES

1N5223B to 1N5279B

2.7V to 180V

DO- 35

Glass Axial Package

FEATURES

The zeners with glass passivated junction in the hermetically sealed glass package with double studs,

provides excellent stability, reliability and better power dissipation.

ABSOLUTE MAXIMUM RATINGS

SYMBOL

VALUE

500

4.0

DESCRIPTION

DC Power Dissipation

Power Derating above 75ºC

UNIT

mW/ºC

P_D

T_stg

- 65 to +200

Operating and Storage Temperature

ºC

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

Forward Voltage at I_F=200mA V <1.1

No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance

Max Zener

Impedance

Max Reverse Leakage Current

Device

(Note 1)

Nominal

Voltage Current

Test

Max Zener

Voltage

I_Rat V_R

V_Zat I_ZT

I_ZT

A & B Suffix only

(Note 2)

Temp. Coeff.

qVz(Note 3)

Z_ZTat

I_ZT

Z_ZKat

I_ZK=0.25mA

(A&B Suffix only)

a V_Z(% /ºC)

-0.080

5.0

3.0

2.0

1.0

2.0

3.0

3.5

4.0

5.0

6.0

6.5

7.0

8.0

8.4

9.1

1N5223B

1N5224B

1N5225B

1N5226B

1N5227B

1N5228B

1N5229B

1N5230B

1N5231B

1N5232B

1N5233B

1N5234B

1N5235B

1N5236B

1N5237B

1N5238B

1N5239B

1N5240B

1N5241B

1N5242B

2.7

2.8

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1

1300

1400

1600

1700

1900

2000

1900

1600

1000

750

500

600

-0.080

-0.075

-0.070

-0.065

-0.060

+/-0.055

+/-0.030

0.038

0.045

0.050

0.058

0.062

0.065

0.068

0.075

0.076

0.077

1N5223B_5279B Rev_2 080605E

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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