1N5252B-B

更新时间： 2024-01-23 11:56:47

品牌	Logo	应用领域
美台 - DIODES		稳压二极管
页数	文件大小	规格书
2页	36K
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1N5252B-B 数据手册

1N5221B - 1N5267B

500mW EPITAXIAL ZENER DIODE

Features

500mW Power Dissipation

High Stability

Low Noise

Surface Mount Equivalents Available

Hermetic Package

V_Z- Tolerance ±5%

Mechanical Data

DO-35

Case: DO-35, Glass

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Marking: Type Number

Weight: 0.13 grams (approx.)

Dim

Min

25.40

Max

4.00

0.60

2.00

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Characteristic

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient Air (Note 1)

Symbol

P_d

Value

500

Unit

°C/W

R_qJA

300

Forward Voltage

@ I_F= 200mA

V_F

1.1

T_j,T_STG

°C

Operating and Storage Temperature Range

-65 to +200

Notes:

1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.

DS18006 Rev. 14 - 2

1 of 2

1N5221B - 1N5267B

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